Report of the 11th ECPE SiC & GaN User Forum

This year, ECPE hosted its SiC & GaN User Forum in Paris, in co-location with EPE 2025 Conference.

The biannual ECPE Wide Bandgap User Forum is dedicated to report state of the art and prospects of silicon carbide (SiC) and gallium nitride (GaN) devices in power electronic systemsm and to foster an exchange between system, circuit and device designers.

In the May issue of Bodo's Power Systems, Andreas Lindeman (Technical Chairman of the ECPE SiC & GaN User Forum) contributed a guest editorial on the main topics of the SiC & GaN User Forum.

Read the article here

Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Ostendstrasse 181
D-90482 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0

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