Wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features such as high breakdown voltage, high frequency capability and high heat resistance beyond 200 C. These features provide us great energy loss reduction in electric conversion, module size reduction, and many other benefits. However, there are barriers to the use of WBG power semiconductors in the marketplace; the biggest being integration.
Ideal performance from SiC or GaN on Si cannot be achieved due to the current processes for system integration and packaging materials. Conventional materials and technologies cannot survive the increasing energy density which raises temperature beyond 200 C.
Wide Bandgap Power Semiconductor Packaging addresses the key challenges that WBG power semiconductors face for integration including:
1) Thermal management such as heat resistance, heat dissipation and thermal stress
2) Noise reduction at high frequency and discrete components
3) Challenges in interfacing, metallization, plating, bonding, and wiring
Experts in the field present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.
Publisher: WP Woodhead Publishing