Bodo's Power Systems offers access to general power electronics knowledge, industry news, and company specific solutions for power electronics applications. Articles are written as contributions by technology experts from the power electronics industry.
ECPE is happy to support Power Electronic Devices and Components (PEDC), an open-access journal founded in 2021 and specifically focusing on power-electronic devices and components, including materials, fabrication, design, characterization, and applications.
PEDC is published by Elsevier and accepts submissions on active power components, passive power components, and related topics in the field of power components, including packaging, gate drivers, new topologies, and disruptive applications, such as 10 kV and higher, energy harvesting, condition monitoring, and EMI in power electronics.
Editors in chief: Prof. Francesco Iannuzzo, Aalborg University, Denmark Prof. Shu Yang, Zhejiang University, China
Power & Beyond is an online content platform that offers curated insights from the power electronics industry. The platform offers a wide range of content - from trends in power electronics and component releases to the latest research results and market dynamics. Power & Beyond is a digital extension of PCIM Europe, the world's leading trade fair and conference for power electronics, intelligent movement, renewable energies and energy management.
Power Systems Design Europe magazine serves the Power Electronics, Power Management, Power Conversion, Intelligent and Embedded Motion Control markets for European systems design engineering professionals.
Power devices are key to modern power systems, performing essential functions such as inverting and changing voltages, buffering, and switching. The increasing complexity of power systems, with distributed renewable generation on the rise, is posing challenges to these devices. In recent years, several new devices have emerged, including wide bandgap devices, each with advantages and weaknesses depending on circumstances and applications. With a device-centric approach, this book begins by introducing the present challenges in Power Electronics, emphasizing the relevance of this discipline in today's scenario, and pointing out the key parameters to pay attention to from the application-design perspective. The next nine chapters dig into details, covering junction diodes, thyristors, silicon MOSFETs, silicon IGBTs, IGCTs, SiC diodes, SiC MOSFETs, GaN metal-insulator-semiconductor field-effect transistors (MIS-FETs), and GaN vertical transistors. A set of three chapters follow, covering key aspects from the designer's standpoint, namely module design and reliability, switching cell design, and IGBT gate-driving methods for robustness and reliability. A chapter outlining the prospects and outlooks in power electronics technology and its market concludes the book. This book addresses power device technology at the design level, by bridging the gap between semiconductor- and materials science, and power electronic applications. It provides key information for researchers working with power electronic devices and for power electronic application designers, and it is also a useful resource for academics and industrial researches working on power electronics at the system level, such as industrial machine designers and robot designers.
Publisher: The Institution of Engineering and Technology
Control of Power Electronic Converters and Systems, Volume 3, explores emerging topics in the control of power electronics and converters, including the theory behind control, and the practical operation, modeling, and control of basic power system models. This book introduces the most important controller design methods, including both analog and digital procedures. This reference explains the dynamic characterization of terminal behavior for converters, as well as preserving the stability and power quality of modern power systems. Useful for engineers in emerging applications of power electronic converters and those combining control design methods into different applications in power electronics technology.
Addressing controller interactions - in light of increasing renewable energy integration and related challenges with stability and power quality - is becoming more frequent in power converters and passive components.
In this original book on model predictive control (MPC) for power electronics, the focus is put on high-power applications with multilevel converters operating at switching frequencies well below 1 kHz, such as medium-voltage drives and modular multi-level converters.
Consisting of two main parts, the first offers a detailed review of three-phase power electronics, electrical machines, carrier-based pulse width modulation, optimized pulse patterns, state-of-the art converter control methods and the principle of MPC. The second part is an in-depth treatment of MPC methods that fully exploit the performance potential of high-power converters. These control methods combine the fast control responses of deadbeat control with the optimal steady-state performance of optimized pulse patterns by resolving the antagonism between the two.
MPC is expected to evolve into the control method of choice for power electronic systems operating at low pulse numbers with multiple coupled variables and tight operating constraints it. Model Predictive Control of High Power Converters and Industrial Drives will enable to reader to learn how to increase the power capability of the converter, lower the current distortions, reduce the filter size, achieve very fast transient responses and ensure the reliable operation within safe operating area constraints.
Targeted at power electronic practitioners working on control-related aspects as well as control engineers, the material is intuitively accessible, and the mathematical formulations are augmented by illustrations, simple examples and a book companion website featuring animations. Readers benefit from a concise and comprehensive treatment of MPC for industrial power electronics, enabling them to understand, implement and advance the field of high-performance MPC schemes.
As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide clear benefits in power converters for consumer and industrial electronics. This book delves into GaN technology and its importance for power electronics professionals engaged with its implementation in power devices.
Foreword: Alex Lidow, CEO of Efficient Power Conversion (EPC)
Market overview: Yole Développement
Technology analysis: Elena Barbarini, System Plus Consulting; Filippo Di Giovanni, STMicroelectronics; Alex Lidow, EPC; Chris Lee, Power Integrations; Dilder Chowdhury, Nexperia; Stephen Oliver and Dan Kinzer, Navitas Semiconductor; Stefano Lovati and Davide Di Gesualdo, EEWeb; Paul Wiener, GaN Systems; and Professor Alex Q. Huang, Tianxiang Chen, and Ruiyang Yu, University of Texas at Austin. In addition, there are reports from Jens Tybo Jensen, Jun Honda, and Pawan Garg, Infineon Technologies; Max Zafrani, EPC Space; Kasyap Patel, Wolfspeed, a Cree Company; Andrea Vinci, Tektronix; and Gerald Deboy, Infineon Technologies.
Tech papers: Keysight, ON Semiconductor, Cadence, United Monolithic Semiconductors, Transphorm, Nexperia, and CEA-Leti
Wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features such as high breakdown voltage, high frequency capability and high heat resistance beyond 200 C. These features provide us great energy loss reduction in electric conversion, module size reduction, and many other benefits. However, there are barriers to the use of WBG power semiconductors in the marketplace; the biggest being integration.
Ideal performance from SiC or GaN on Si cannot be achieved due to the current processes for system integration and packaging materials. Conventional materials and technologies cannot survive the increasing energy density which raises temperature beyond 200 C.
Wide Bandgap Power Semiconductor Packaging addresses the key challenges that WBG power semiconductors face for integration including:
1) Thermal management such as heat resistance, heat dissipation and thermal stress
2) Noise reduction at high frequency and discrete components
3) Challenges in interfacing, metallization, plating, bonding, and wiring
Experts in the field present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.
Induktive Bauelemente spielen eine Schlüsselrolle bei der Entwicklung von Netzgeräten, Wechselrichtern und anderen leistungselektronischen Systemen. Das Lehrbuch beschäftigt sich intensiv mit der Berechnung der parasitären Eigenschaften von Spulen und Transformatoren in Abhängigkeit von ausgewähltem Kern (Geometrie und Material), Wickelgut (Runddraht, Litze, Folie) und internem Aufbau, d.h. Positionierung der Wicklungen im Wickelfenster. Schwerpunkte bilden die unterschiedlichen Verlustmechanismen in Kern und Wicklung, die induktiven und kapazitiven Kopplungen sowie das EMV-Verhalten dieser induktiven Komponenten.
Arendt Wintrich, Ulrich Nicolai, Werner Tursky, Tobias Reimann
Today, IGBT and power MOSFET modules are instrumental in power electronic systems and are increasingly gaining ground in new fields. This goes hand in hand with the ever increasing need for rectifier diodes and thyristors as cost-efficient means of connecting to the power supply grid. This application manual is intended to assist users with component selection and application.
This book will provide the technical community with an overview of the development of new solutions and products that address key topics, including electric/hybrid vehicles, ultrafast battery charging, smart grids, renewable energy (e.g., solar and wind), peak shaving, and reduction of energy consumption. The needs for storage discussed are within the context of changes between the centralized power generation of today and the distributed utility of tomorrow, including the integration of renewable energy sources.
Throughout the book, methods for quantitative and qualitative comparison of energy storage means are presented through their energy capacity as well as through their power capability for different applications. The definitions and symbols for energy density and power density are given and relate to the volume and weight of a given system or component. A relatively underdeveloped concept that is crucial to this text is known as the theory of Ragone plots. This theory makes possible the evaluation of the real amount of energy that can possibly release out of a given system, with respect to the level of power dependency chosen for the discharge process.
From systems using electrochemical transformations, to classical battery energy storage elements and so-called flow batteries, to fuel cells and hydrogen storage, this book further investigates storage systems based on physical principles (e.g., gravitational potential forces, air compression, and rotational kinetic energy). This text also examines purely electrical systems such as superconductive magnets and capacitors. Another subject of analysis is the presentation of power electronic circuits and architectures that are needed for continuously controllable power flow to and from different storage means. For all systems described, the elementary principles of operation are given as well as the relationships for the quantified storage of energy. Finally, Energy Storage: Systems and Components contains multiple international case studies and a rich set of exercises that serve both students and practicing engineers.
Based on the fundamentals of electromagnetics, this clear and concise text explains basic and applied principles of transformer and inductor design for power electronic applications. It details both the theory and practice of inductors and transformers employed to filter currents, store electromagnetic energy, provide physical isolation between circuits, and perform stepping up and down of DC and AC voltages.
The aim of this book is to give the reader an understanding of the specific fundamentals of IGBT in conjunction with their application.
This book will provide students of power electronics with valuable information about the main contemporary power semiconductors and the applications in which they are used, while development engineers targeting power electronic converters will find all the essentials of selecting, dimensioning and applying IGBT modules laid out clearly and comprehensively.
Explaining the physics and characteristics of power semiconductor devices, this book presents an overview of various classes of power semiconductors. It provides insight into how they work and the characteristics of the various components from the viewpoint of the user, going through all modern power semiconductor device types. The physics are explained in reasonable detail, providing the precise amount of information needed to fully understand the component's behavior in the application. Exploring the specific strengths and weaknesses of each device type, the book demonstrates how these devices fit into the system and how they will behave.
Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
Die große Resonanz auf die erste Auflage von "Elektrische Antriebe 3 - Leistungselektronische Bauelemente" hat eine Neuauflage erfordert. Der Grundsatz des Buches, Leistungs-Halbleiter auf der Basis halbleiterphysikalischer Grundlagen zu verstehen und nicht nur phänomenologisch zu beschreiben, ist auch in dieser zweiten Auflage beibehalten worden. Allerdings hat der immense technologische Fortschritt wesentliche Überarbeitungen und Erweiterungen erfordert. Es wurden deshalb nicht nur die vorhandenen Kapitel aktualisiert und zum Teil erheblich erweitert, sondern um die folgenden zwei neuen Kapitel "Aufbau- und Verbindungstechniken in der Leistungselektronik" sowie die "physikalische Modellbildung von Leistungshalbleitern" ergänzt. Damit liegt ein hochmodernes Werk vor, das eine umfangreiche Basis für den fundierten Einstieg in die Leistungselektronik bietet.
Henry Shu-hung Chung, Huai Wang, Frede Blaabjerg and Michael Pecht
Reliability of Power Electronic Converter Systems outlines current research into the scientific modeling, experimentation, and remedial measures for advancing the reliability, availability, system robustness, and maintainability of Power Electronic Converter Systems (PECS) at different levels of complexity.
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Postal address ECPE e.V.: ECPE European Center for Power Electronics e.V. Ostendstrasse 181 D-90482 Nuremberg, Germany Phone: +49 (0)911 81 02 88-0