Tutorial

ECPE Tutorial: Drivers and Control Circuitry for IGBTs and MOSFETs

Date: 19/02/2019 - 20/02/2019

Location: Lyon, France

Chairmen:

Prof. Dr. Martin Pfost, Technical University of Dortmund  
Dr. Reinhold Bayerer, Physics of Power Electronics
Dipl.-Ing. Michael Hornkamp, Power Integrations GmbH
Dr. Arendt Wintrich, Semikron Elektronik GmbH & Co. KG
Dr. Pierre Lefranc, Grenoble Electrical Eng. Lab (G2ELab)

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ECPE Tutorial: Drivers and Control Circuitry for IGBTs and MOSFETs

Content:
Drivers and control circuitry are the interface between the signal level and the power stage within a power electronic systems. They are responsible for a safe operation of the power switches. Progress in microelectronics and in the implementation of cheap sensors allows to increase the functionality of gate drive units for MOSFETs and for IGBTs. Functions like gate current control, closer observation of voltages and of current slopes can be implemented on gate drivers at low incremental cost. Advanced solutions for the isolation barrier with enhanced bi-directional communication lead to completely new possibilities.
In the context of the development and adoption of innovative Wide-Band-Gap semiconductors, new challenges concerning robust operation at very fast switching speed and frequencies also need to be addressed in order to attain the expected gains at system level. With this tutorial we want to transfer the necessary knowledge to drive and control IGBTs and MOSFETs in a safe way.

All presentations and discussions will be in English language.

Tutorial

ECPE Tutorial: Drivers and Control Circuitry for IGBTs and MOSFETs

Date: 19/02/2019 - 20/02/2019

Location: Lyon, France

Chairmen:

Prof. Dr. Martin Pfost, Technical University of Dortmund  
Dr. Reinhold Bayerer, Physics of Power Electronics
Dipl.-Ing. Michael Hornkamp, Power Integrations GmbH
Dr. Arendt Wintrich, Semikron Elektronik GmbH & Co. KG
Dr. Pierre Lefranc, Grenoble Electrical Eng. Lab (G2ELab)

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Register before 12 February 2019

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