Power semiconductors are key components in power electronics systems and along with digital control a significant driver of innovation today. The conduction and switching losses of the components have been continually reduced in the past. Complemented by extraordinary progress in packaging and power module technology, this led to substantial improvements in the power density and efficiency of power electronics converters.

Current developments in the field of wide–bandgap semi­conductors again promise significant improvements in switching and conduction behaviour. And from Si based devices further progress is expected as well. Exploitation of this potential, however, requires wide-ranging research activities, both regarding component concepts and also with respect to the possibility of hybrid and (applicable especially to GaN) monolithic power integration. The system concepts must also be re-evaluated. The question of the development of SiC high voltage components as an alternative to the Si multi-level configurations may serve here as an example.

In this situation the decreasing number of university chairs with research emphasis on Power Semiconductors is of special concern. Hence within the framework of this workshop, not only technical aspects should be discussed, but also future university research and teaching, and co-operation with industry.

The workshop is chaired by Prof. Dr. J.W. Kolar (ETH Zurich), Prof. Dr. D. Silber (University Bremen) and Prof. Dr. L. Lorenz (Infineon/ECPE).

All presentations and discussions will be in English.