After the previous Silicon Carbide (SiC) User Forums organised by ECPE, new power electronic systems with wide bandgap components and new devices have been reported, which are based on SiC or recently also on GaN (Gallium Nitride) material. Time has thus come to continue the exchange between experts involved in converter and device development: The 3rd User Forum will focus on typical power electronic systems the use of wide bandgap – mailny SiC – semiconductors is highly promising for. Application examples come from electric drives including converters for transportation and power supplies including inverters for renewable energy. Additionally insights in recent SiC and GaN material and device technology — which is the base for future system development — will be given. International renowned experts have been invited to give an overview in keynotes, to in depth explain their research and development work in technical presentations and to share their knowledge in discussion forums as an indispensable part of the event.

The SiC User Forum is this way intended as a platform to share experience and ideas, to discuss and find out which power electronic systems are predestinated for usage of wide bandgap devices and how to appropriately design-in those novel, almost ideal but also challenging components.

SiC User Forum 2009 is scheduled to take place right after EPE conference 2009 in Barcelona. Prof. Andreas Lindemann (Otto-von-Guericke-University, Magdeburg, Germany) will chair the event together with Prof. José Millan (Centro National de Microelectronica) and Mr. Thomas Harder (ECPE).