Progress in microelectronics and in the implementation of cheap sensors allows to increase the functionality of gate drive units for MOSFETs and for IGBTs. Functions like gate current control, closer observation of voltages and of current slopes can be implemented on gate drivers at low incremental cost. Advanced solutions for the isolation barrier with enhanced bi-directional communication lead to completely new possibilities. They can be used for better switching performance, better protection or for condition monitoring of the power semiconductors and modules.
In the context of the development and adoption of innovative Wide-Band-Gap semiconductors, new challenges concerning robust operation at very fast switching speed and frequencies also need to be addressed in order to attain the expected gains at system level. Nevertheless, without the necessary level of robust operation under all foreseen operating conditions, new and future solutions will be not accepted by developers and users. With this workshop we want to highlight again the state-of-the-art of advanced gate drive technology, and we will discuss what we can expect in the near future.

The workshop is chaired by
Prof. Dr. Axel Mertens (Leibniz Universität Hannover)
Dr. Samuel Araujo (University of Kassel)
Jochen Koszescha (ECPE e.V.)

All presentations and discussions will be in English language.