Since more than 18 years the biannual ECPE Wide Bandgap User Forum has explained the background and given advise and support to design-in SiC and GaN semiconductor devices in power electronic systems. Major progress has been achieved in this period, with today a multitude of SiC diodes and MOSFET transistors and as well GaN HEMTS being available and used in series products. For those, special aspects gain importance, such as robustness or qualification when exposed to demanding mission profiles. On the other hand still more basic research and development work is dedicated to special devices made by SiC, GaN and other wide bandgap materials including their potential applications. 

These actual topics will be addressed during the upcoming 11th ECPE Wide Bandgap User Forum:
The programme will address SiC & GaN device concepts as well as trends and technologies in packaging and advanced cooling. Interesting applications e.g. in data centres, e-trucks, PV and avionics will showcase the potential of WBG power electronics. A special session is dedicated to the increasingly important topics of robustness and reliability. Finally, R&D directions and emerging technologies will be discussed incl. the potentioal of UWBG power devices.
International renowned experts are being invited to give an overview and to in depth explain their research and development work in technical presentations. Besides, the ECPE Wide Bandgap User Forum offers a platform for all participants to share experience and ideas.

All presentations and discussions will be in English.