European Projects

ENIAC - Development of Advanced GaN Substrates & Technologies (AGATE)

Date: 01/04/2013 - 31/03/2016

Coordinator: 
SOITEC SA

Consortium:

  • STMicroelectronics (Tours) SAS
  • ON Semiconductor Belgium BVBA
  • Green Power Technologies SL
  • PLANSEE SE
  • EV Group E. Thallner GmbH 
  • Commissaraiat a l´Energie Atomique et aux Energie Alternatives 
  • Institute of High Pressure Physiscs UNIPRESS
  • TP-GAN SP ZOO
  • Universidad de las Palmas de Gran Canaria 

Volume: 
59,6 Mio. €


Project:
The ENIAC JU project AGATE will cover the whole value chain, from material
and equipment to devices, setting up two pilot lines for GaN-based
advanced substrates and devices to accelerate the introduction and market
acceptance of these new technologies.

 

 

Cordis Website

General information

ENIAC - Development of Advanced GaN Substrates & Technologies (AGATE)

Postal address ECPE e.V.:
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D-90443 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0

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