European Projects, ECSEL

ECSEL - Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost (YESvGaN)

Date: 01/05/2021 - 30/04/2024

Coordinator:
Robert Bosch GmbH

Consortium:
23 Partners 

Volume:
27 Mio. €


Project:

YESvGaN will establish a new class of vertical GaN power transistors which combines the performance benefits of vertical wide-bandgap transistors with the cost advantages of established silicon technology.

 

YESvGaN Website

ECSEL - Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost (YESvGaN)

Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Landgrabenstrasse 94
D-90443 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0

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