End of March the 10th edition of the SiC and GaN User Forum was held in Erding near Munich Airport with more than 300 participants on site and online... After two years of the pandemic, we are pleased that the SiC & GaN User Forum was once again able to offer a broad discussion and many networking opportunities. Employees of ECPE member companies can find the proceedings in our members area after login.

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Read the full articel soon in the May/PCIM edition of Bodos Power:

10th ECPE SiC & GaN User Forum
Potential of Wide Bandgap Semiconductors in Power Electronic Applications
— Report of Conclusions —
By Andreas Lindemann, Otto-von-Guericke-Universität Magdeburg, Chair for Power Electronics

The biannual ECPE Wide Bandgap User Forum is dedicated to report state of the art and prospects of SiC and GaN devices in power electronic systems and to foster an exchange between system, circuit and device designers. This year the tenth User Forum could be marked. It has been conducted as a hybrid event with the vast majority of the international participants and speakers being onsite at Erding/Munich. The programme comprised an overview as well as detailed presentations about GaN devices and related systems on the first day and SiC devices and systems on the second. These have been complemented by common topics — such as reliability and passive components — and an outlook. Some main findings are summarised in the following: ...

The full article will soon be available on Bodos Power