Call for Papers: IEEE Open Journal of Power Electronics (OJ-PEL)

Special Compendium on Wide Bandgap Power Semiconductors for the International Technology Roadmap for Wide Bandgap Power Semiconductors (ITRW)

Call for papers

Scheduled Publication Time: February 2021

Papers that demonstrate the potential of wide-bandgap technology for power applications, address technology bottlenecks
and demonstrate potential breakthroughs are particularly welcome. Topics of interest include, but are not limited to:

Materials and Devices (Current state-of-the-art and forecasting)

  •  SiC Power Devices
  • GaN Power Devices (HEMTs, integration, and vertical GaN)
  • Ultra-WBG materials

Packaging and integration, including materials, processes, architectures and tools:

  • Packaging and integration for high speed switching
  • Higher voltage (>10 kV) packaging
  • Packaging for operation at higher temperatures and in other harsh environments

System Integration and Application of SiC and GaN

  • Novel applications and converter topologies enabled by GaN and SiC
  • Design and Simulation methods for GaN and SiC-based system designs
  • Converter design, control, and protection
  • Passives, cooling and integration for WBG converters

Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Landgrabenstrasse 94
D-90443 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0

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