Since more than 16 years the biannual ECPE Wide Bandgap User Forum has explained the background and given advise and support to design-in SiC and GaN semiconductor devices in power electronic systems. Major progress has been achieved in this period, with today a multitude of SiC diodes and MOSFETs and as well GaN HEMTs being available and used in series products. For those, special aspects gain importance, such as robustness or qualification when exposed to demanding mission profiles. On the other hand still more basic research and development work is dedicated to special devices made by SiC, GaN and other wide bandgap materials including their potential applications. These actual topics will be addressed during the upcoming 10th ECPE Wide Bandgap User Forum:
The programme will start with an overview on the status and trends in WBG Power Electronics. Then, the 1st day is dedicated to the use of GaN HEMTs in different systems and applications. Recent developments e.g. on bidirectional HEMTs, multi-channel tri-gate devices and vertical GaN devices will also be presented and discussed. The 2nd workshop day will concentrate on SiC device applications. Further, an outlook on promising ultra wide bandgap (UWBG) materials and devices will be given. The workshop will be closed with a panel discussion addressing the topics of WBG device maturity, robustness and reliability.
International renowned experts are being invited to give an overview and to in depth explain their research and development work in technical presentations. Besides, the ECPE Wide Bandgap User Forum offers a platform for all participants to share experience and ideas.