Tutorial

ECPE Tutorial: Power Semiconductor Devices & Technologies

Date: 27/06/2023 - 28/06/2023

Location: Düsseldorf, Germany

Technical Chair:

Dr. Anton Mauder
Infineon Technologies (DE)

Prof. Nando Kaminski
University of Bremen (DE)


ECPE Contact:
Marietta Di Dio
+49 911 81 02 88 - 13
marietta.didio@ecpe.org  


Registration Deadline: 20 June 2023

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ECPE Tutorial: Power Semiconductor Devices & Technologies

The tutorial is aimed at engineers who are engaged in power electronics and want to improve their knowledge and understanding of power devices including the developments expected in near future.

The course starts with a general overview on required power device properties and a very basic treatment of semiconductor material and device physics.

Blocking capability of the devices, unipolar and bipolar current transport and gate control will be discussed. Diodes, MOS transistors (including compensated super­junction MOS) and Insulated Gate Bipolar Transistors (IGBT) will be treated in detail including their dynamical properties, safe operation and temperature limits.

The wide bandgap semiconductor materials silicon carbide and gallium nitride have become important competitors to silicon. Their superior properties for application and the expectations for the next years will be discussed. Also, issues concerning control, packaging and integration will be treated in the corresponding contributions.

The following chapters demonstrate basic principles of power electronic systems and the basics of intelligent IGBT / MOSFET control circuits. MOS transistor and IGBT gate drivers for various fields of application are discussed in detail.

Finally a short overview of hybrid power electronic integration and the most relevant aspects (cooling, reliability and EMC problems) will be presented.

All presentations and discussions will be in English.

Tutorial

ECPE Tutorial: Power Semiconductor Devices & Technologies

Date: 27/06/2023 - 28/06/2023

Location: Düsseldorf, Germany

Technical Chair:

Dr. Anton Mauder
Infineon Technologies (DE)

Prof. Nando Kaminski
University of Bremen (DE)


ECPE Contact:
Marietta Di Dio
+49 911 81 02 88 - 13
marietta.didio@ecpe.org  


Registration Deadline: 20 June 2023

ECPE / Cluster Tutorial: Power Semiconductor Devices & Technologies

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Industry: ECPE Member Companies: 25 % discount for each participant

University/institutes: 10 % discount for ECPE Competence Centres

Students/PhD students: Please send a copy of your student ID/students seats are limited

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Register before 20 June 2023

  • The regular participation fee includes dinner, lunches, coffee/soft drinks. The reduced (PhD) students fee includes all the above except for dinner (can be booked for an extra fee of € 50*)
  • The presentations will be provided by email via a download link short before the event. A printed version of the tutorial handout is available on request (€ 50,-*).
  • With the confirmation of registration by email you are registered for the tutorial and the invoice will be sent by email.
  • Payment by credit card not possible.
  • Cancellation policy: Full amount will be refunded in case of cancellation up to 2 weeks prior to the event. After this date 50 % of the fee is non-refundable (substitutes are accepted anytime).
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  • If the event cannot take place because of force majeure or for good cause, a change to an online format or a cancellation is possible. The delegates shall be informed immediately. In this case, the participant is able to cancel free of charge. No claims beyond this shall be entertained.
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Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Ostendstrasse 181
D-90482 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0

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