Registration Deadline: 23 June 2021
Since more than 14 years the biannual ECPE Wide Bandgap User Forum has explained the background and given advise and support to design-in SiC and GaN devices in power electronic systems. Major progress has been achieved in this period, with today a multitude of SiC diodes and transistors and as well GaN transistors being available and used in series products. For those, special aspects gain importance, such as robustness or qualification when exposed to demanding mission profiles. On the other hand still more basic research and development work is dedicated to special devices made by SiC, GaN and other wide bandgap materials including their potential applications. These actual topics will be addressed during the upcoming 9th ECPE Wide Bandgap User Forum:
It will start with an overview, introducing the following more detailed presentations. Those will initially refer to exemplary volume applications with SiC and GaN devices. Special attention is dedicated to the design and qualification process including suitable layout methods, measures to achieve the required electromagnetic compatibility and also the aspect of qualification or reliability testing respectively. Circuit theory constitutes the link between system and device; in this respect, drivers are of particular interest. Finally, the related WBG devices themselves will be considered, including an insight and outlook on integration particularly of GaN and on other promising materials.
International renowned experts are being invited to give an overview and to in depth explain their research and development work in technical presentations. Besides, the ECPE Wide Bandgap User Forum offers a platform for all participants to share experience and ideas.