Tutorial

ECPE/Cluster-Tutorial: Power Semiconductor Devices & Technologies

Date: 20/11/2019 - 21/11/2019

Location: Rüsselsheim (bei Frankfurt), Germany

Chairmen:

Dr. Anton Mauder, Infineon Technologies (D)
Prof. Nando Kaminski, University of Bremen (D)

Members Area

All proceedings since 2004, studies, reports and more... ECPE Network Members are welcome to register!

Login not necessary for event online-registration!

ECPE/Cluster-Tutorial: Power Semiconductor Devices & Technologies

The tutorial is aimed at engineers who are engaged in power electronics and want to improve their knowledge and understanding of power devices including the developments expected in near future.
The course starts with a general overview on required power device properties and a very basic treatment of semiconductor material and device physics.
Blocking capability of the devices, unipolar and bipolar current transport and gate control will be discussed. Diodes, MOS transistors (including compensated super-junction MOS) and Insulated Gate Bipolar Transistors (IGBT) will be treated in detail including their dynamical properties, safe operation and temperature limits. 
The wide bandgap semiconductor materials silicon carbide and gallium nitride have become important competitors to silicon. Their superior properties for application and the expectations for the next years will be discussed. Also, issues concerning control, packaging and integration will be treated in the corresponding contributions.
The following chapters demonstrate basic principles of power electronic systems and the basics of intelligent IGBT / MOSFET control circuits. MOS transistor and IGBT gate drivers for various fields of application are discussed in detail.
Finally a short overview of hybrid power electronic integration and the most relevant aspects (cooling, reliability and EMC problems) will be presented.

 

Course Instructors:
Dr. Anton Mauder, Infineon Technologies
Prof. Nando Kaminski, University of Bremen
Dr. Reinhard Herzer, Semikron Elektronik
Prof. Dieter Silber, University of Bremen
Dr. Peter Tuerkes, Consultant
 

 

Tutorial

ECPE/Cluster-Tutorial: Power Semiconductor Devices & Technologies

Date: 20/11/2019 - 21/11/2019

Location: Rüsselsheim (bei Frankfurt), Germany

Chairmen:

Dr. Anton Mauder, Infineon Technologies (D)
Prof. Nando Kaminski, University of Bremen (D)

Online-Registration

Participant
Address Participant
Invoice Address (if different)
Invoice Details
Participation fee

Participation fee for industry:
- 25 % discount for ECPE Member Companies

Participation fee for university/institutes:
- 10 % discount for ECPE Competence Centres

Participation fee for students / PhD students:
- shortened tutorial package: dinner is not included; € 50,- (plus VAT) extra
- please send a copy of your student ID / students seats are limited

Register before 13 November 2019

  • The fee includes dinner (not included for students/PhD students), lunch, hot and cold drinks, the printed hand-outs (on-site) and potential updates by download link (afterwards).
  • With the confirmation of registration by email you are registered for the tutorial and the invoice will be sent by post.
  • Payment by credit card not possible.
  • In case of cancellation later than two weeks before beginning or non-attendance 50 % of the participation fee are payable.
    It’s possible to send a substitute participant.
  • Photo material will be created at the event. Potentially a picture of the participants can be taken and used for editorial reporting.
  • Due to the General Data Protection Regulation, we kindly point out that we have to store your personal data in our CRM system in order to process your registration. The ECPE Privacy Policy can be found at http://www.ecpe.org/contact-2/privacy-policy/
Please make your choice
Submit

Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Landgrabenstrasse 94
D-90443 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0

Subscribe to the ECPE News

 

© 2018 ECPE European Center for Power Electronics e.V.