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Dynex semiconductor ltd
Dynex Semiconductor Ltd delivers ad-
vanced power electronic semiconductor
and system solutions from its Lincoln,
UK HQ. It is recognised worldwide as a
specialist designer and manufacturer of
IGBT, discrete bipolar devices and power
assemblies. It now benefits from being
part of CRRC Corporation of China with
access to its volume manufacturing and
applications expertise. Lincoln is the CRRC
Centre of Excellence for power semicon-
ductor R&D and electric vehicle power
assemblies.
IGBT, FRD die and Module Technology
With advanced design and Si fabrication
capabilities, Dynex offers high reliability
standard and custom IGBT and diode
modules with ratings up to 3600A and
6500V for automotive, aerospace, traction,
HVDC, renewable energy & industrial
applications. In 2017, Dynex introduced
the world’s most capable Press-pack IGBT,
with power ratings of up to 3000A at
4500V. Dynex modules are designed for
operation under extreme conditions and
are one of the main outputs from its
advanced wafer foundry and assembly
facilities. In addition, Dynex offers a
Silicon die manufacturing foundry service
to external customers.
Bipolar Products and Technology
Dynex’s bipolar products consist of thyris-
tors, power diodes, gate turn-off thyristors
and fast recovery diodes. Dynex thyristors
feature latest ion implant technology for
marked improvements in switchable power
density. Voltages extend to 8.5kV with cur-
rent ratings to 7kA at silicon diameters up
to 150mm. Dynex diode voltages extend
to 9kV, currents to 11kA and are used on
IGBT inverter front-end rectifiers, smelters
and trackside rectification. Dynex is com-
mitted to the continued production of
GTOs up to 4.5kV.
Power Assemblies
The long experience of utilising the Dynex
semiconductor range, and an understand-
ing of applications, enables the group to
provide optimum power assemblies solu-
tions. These include protection and control
electronics, air and liquid cooled assem-
blies, semiconductor device test equip-
ment, and pulse power systems. Heat
sinks and clamping arrangements are
available.
Silicon Carbide
Dynex has been involved in the develop-
ment in wide band-gap power semicon-
ductors, in particular silicon carbide (SiC),
since 2011. Projects on SiC have included
1.2-3.3 kV SiC MOSFETs and SBDs, 3.3 kV
Pin diodes, and hybrid/full SiC power mod-
ules for traction and other applications.
R&D Centre Assemblies –
Electric Vehicles
The R&D Centre Assemblies group develop
integrated power units for electric vehicles.
Across the board knowledge enables the
group to provide products with high power
density. New technologies include intel-
ligent gate drives, 3D thermal manage-
ment, advanced packaging and EMC
technologies, condition monitoring and
health management.
