115
Cutting Edge Research Facilities
CEA Tech, the technology research divi-
sion of France’s atomic and alternative
energy commission CEA, is made up of
three institutes (Leti, Liten and List),
which together develop a comprehensive
portfolio of technologies for ICTs, energy
and healthcare.
Power Electronics at CEA Tech
Power electronics is a key strategic activity
at CEA Tech. In conjunction with multiple
industrial partners, CEA Tech’s scientists
develop new integrated systems based on
GaN and SiC technology. Research is pri-
marily driven by electrical mobility and stat-
ic photovoltaic/storage applications, in
which GaN/Si and SiC devices are ideally
suited to DC-DC and AC-DC converters.
These devices effectively enhance final sys-
tem efficiency through their higher power
density and greater compactness. CEA
Tech’s value proposition embraces the en-
tire technology chain from power converter
design to system integration, characteriza-
tion and optimization.
Power GaN/Si Technology and Devices
CEA Tech develops 200 mm epitaxial GaN-
on-Silicon wafers. In 2015, these devices
achieved state-of-the art electrical perfor-
mance for the 600V GaN normally-off
transistor and, in 2016, demonstrated GaN
capability at 1200V. GaN MIS N.OFF tech-
nology is ideally positioned to increase sys-
tem efficiency in the 600V - 1200V and
30 - 100A ranges at lower cost than com-
peting technologies. CEA Tech also devel-
ops schottky GAN/Si diodes. Lateral GaN/Si
capability opens the door to new monolith-
ic functionality. Using the same technology
platform, we have developed a bidirection-
al current/voltage switch, which offer new
opportunities for enhancing system archi-
tecture (AC-AC matrix converter, etc…), to
give higher efficiency, more compact sys-
tems at lower cost.
GaN IC, 3D Integration and Packaging
GaN IC represents a method of extend-
ing the limits of at least MV applications
by working on converter miniaturization
at higher system frequency. CEA Tech is
currently developing different strategies
to achieve this goal, including a hybrid
approach based on a PSOC flip chip and
a dedicated self-biased ASIC insulated sil-
icon driver powered in stages. Further
developments include an interposer with
TSV and bump, and implementation of
an integrated monolithic approach based
on the integration of the driver, control
and protection on the same die.
CEA Tech is working on compact low in-
ductance modules (half bridge with driv-
ers) for higher voltage and kW applica-
tions combined with 3D wafer level
packaging. We are also developing an in-
novative ultra-compact 2-sided cooled, 3D
module to maximize efficiency and CEM
based on an interleaved converter design.
New Ferromagnetic Devices for HF
Applications
Increasing converter frequency dictates
the need for low loss passive devices, es-
pecially inductors. CEA Tech has a unique
platform for building new ferromagnetic
inductors featuring extremely low losses.
We are developing a 200W DC-DC con-
verter operating at 5MHz and subject to
low magnetic leakage and power losses
(<50°C).
System Integration
CEA Tech is developing 600V - 3.3kV HV
SiC device-based converters PV, focusing
on current source inverters, UPS and stor-
age applications and electrical mobility.
Moreover, 600V and lower MV converters
are being developed based on GaN/SiC
devices for W and kW applications. An-
other research area covers HV (several kV)
DC devices to raise overall system efficien-
cy and power density.
Commissariat à l’énergie atomique et aux énergies alternatives
