95
University of Cassino and southern lazio
Presentation
The research group on Power Semicon-
ductor Devices operating in the Industrial
Electronics Laboratory of the Department
of Electrical and Information Engineer-
ing (DIEI - LEI) – University of Cassino and
Southern Lazio, is very active in research
dealing with modeling, simulation and
experimental characterization of power
semiconductor devices with a particular
attention to the physical mechanisms
which may cause the device failure and
can affect reliability and robustness of the
modern power semiconductor devices.
The research interests include the opera-
tions of power devices and modules at
high temperature and at the edges of
their safe operating area (short circuit,
overcurrent, inductive unclamped tests,
etc...). The research group has also ma-
tured a broad experience in the theo-
retical and experimental study of Total
Dose (TID) and Single Event Effects (SEE)
on power semiconductor devices due to
gamma, proton, neutron and heavy ion
irradiations.
Facilities
DIEI-LEI laboratory houses a high-voltage
test room (Fig. 1) where several equip-
ments are hosted. Among them it is
worth mentioning several versions of non
destructive power semiconductor test-
ers (ranging up to 5kA and 6.5kV) where
devices or modules are tested with a pro-
tection circuit able to prevent the device
failure at the occurrence of instabilities.
The tests can be performed at case tem-
perature ranging from -50°C up to 200°C
thanks to a machine which is able to con-
vey directly on the samples under test a
pre-cooled/heated special fluid (Fig. 2).
In such a way the components under test
are brought to the desired temperature
without the need of cooling/heating the
whole apparatus.
The group is able to perform irradiation
tests according to the international stand-
ards and has also developed new irradia-
tion test methodologies which, together
with 3D FEM simulations, permit a better
understanding of device failures during ir-
radiation experiments. The research group
has access to several irradiation facilities:
Tandem and Cyclotron at the INFN – LNS,
Catania, SIRAD at the INFN – LNL, Legnaro,
CALLIOPE (gamma rays), TAPIRO neutrons
irradiation facilities at ENEA-Casaccia and
Frascati Neutron Generator” – FNG at
ENEA-Frascati.
Main collaborations
The research group has recently collabo-
rated with HITACHI Rail (formerly ANSAL-
DOBREDA) in the non destructive char-
acterization of high power modules and
the development of high efficiency power
converters (rated at 30kW), with Fairchild
in the study of IGBT Short Circuit and with
ST-Microelectronics for the development
of radiation hardened power MOSFET.
Fig. 3 – Beam line for
heavy ion irradiation
at the cyclotron of
the Laboratori
Nazionali del Sud –
INFN, Catania, Italy.
Fig. 1 – The high voltage test room.
Fig. 2 – Non destructive tester for power semiconductor
devices at temperature ranging from -50 °C up to 200 °C.
