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Rohm Semiconductor gmbh
ROHM Semiconductor –
Quality at all times
ROHM is a leading global semiconductor
and electronic component manufacturer
having its headquarters in Kyoto/Japan.
The Company’s portfolio includes numer-
ous products ranging from innovative
power management solutions to eco de-
vices. Its SiC diodes, SiC MOSFETs and
modules are widely deployed in automo-
tive, industrial, and energy harvesting ap-
plications. SiCrystal AG, a German-based
company and part of ROHM group, has
adopted a 6 inch integrated SiC wafer
production system, which is the succes-
sor to the current 4 inch wafers. ROHM is
able to offer full-scale mass production of
SiC components providing high reliability
and advanced characteristics.
Acquires Powervation
The strategic combination of Powervation’s
Intelligent Digital Power™ platform with
ROHM will enable addressing a broad
range of fast-growing market opportuni-
ties, as customers increasingly seek digital
power solutions to power next genera-
tion high density systems and ICs such as
Processors, Memory, FPGAs and ASICs.
New Technology Highlight of SiC
MOSFET (MOS)
In 2015 ROHM started mass production
of Gen.3 SiC MOS (Trench Gate Structure)
enhancing the MOSFETs family of prod-
ucts; which in turn contributes in general
to the evolution of Power Electronics.
Industry’s First Mass-Produced
“Full SiC” Power Modules
ROHM has pioneered power modules
equipped with SiC-MOS and SiC-SBD,
which allow substantial reduction in
switching losses.
Currently ROHM is co-operating with
various power module manufacturers all
over the world, in order to maximize the
SiC appeal in the global market.
Isolated SiC/IGBT Gate Drivers
The new family of isolated gate drivers
facilitates compact designs. Therefore,
they are considered to be optimal for
inverters and DC/DC converters; they are
capable of driving SiC MOS and IGBT as
well. With the market’s highest CMR of
100 kV/µS, along with multiple protec-
tion functions, they guarantee a stable
and high frequency operation.
World’s lowest VF –
SiC Schottky Barrier Diode (SBD)
Compared to Si-FRD, SiC-SBD has ultra-
small reverse recovery time. This reduces
switching losses dramatically and allows
operation with High-speed switching,
which contributes to end-product minia-
turization.
Power Shunt Resistors
Based on an innovative metal alloy,
ROHM started mass production of ultra-
low OHM power shunt resistors up to
5W and low TCR, which are suitable for
high current detection circuits, such
as automotive applications and motor
control units.
