European Projects, ENIAC

ENIAC - Large Area SiC Substrates and Heteroepitaxial GaN for PowerDevice Applications (LAST POWER)

Date: 01/04/2010 - 31/10/2013

Coordinator: 
STMicroelectronics

Consortium: 
15 partners from 7 nations

Volume: 
16,3 Mio. €


Project:
Power microelectronics represents an important segment of the semiconductor industry worldwide and is generally characterised by devices with low revenue but high strategic importance. The aim of the ENIAC JU project LAST POWER project is to make the European Union independent from other sources in the design and production of highly-efficient systems for applications controlling electrical power. The project focuses on the development of high-power technologies and devices for both the forthcoming era of pure electrical mobility and a variety of industries which make use of electrical drivers.

 
 

Cordis Website

General information

ENIAC - Large Area SiC Substrates and Heteroepitaxial GaN for PowerDevice Applications (LAST POWER)

Postal address ECPE e.V.:
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D-90482 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0

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