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Power MOSFET
TOSHIBA is developing power MOSFET
for the consumer, automotive and indus-
trial market.
For Low-Voltage MOSFET (VDSS >= 30V
to 250V) TOSHIBA has released the
“U-MOS VIII-H” and “U-MOS IX-H”
series featuring improved ON-resistance
and switching performance compared
to conventional series. U-MOS stands for
Trench MOS.
For mid- to high-voltage MOSFET
(VDSS >= 600V to 800V), TOSHIBA has
started series production of the super
junction structure using the “Single-
Epitaxial (SE) process” for 600V as tech-
nology leader from 2012.
That technology is now being expanded
to higher voltages like 650V, 800V and
in conjunction with fast recovery body-
diodes.
TOSHIBA will further improve the
MOSFET performance (package and
silicon) and so to contribute to high-
efficiency and downsizing of various
power electronics systems.
High Power Devices
Key markets for TOSHIBA’s high power
devices (VCES >= 1700V to 4500V) are in-
dustry, railway transportation, power
quality, transmission and distribution.
Required features are “Energy Saving”
and “High Efficiency”. To respond to
such challenges, TOSHIBA had released
the IEGT (Injection Enhanced Gate Tran-
sistor) technology tailored to cope with
high breakdown voltages and low power
losses. Higher junction temperature and
higher current rating products will sup-
port such customer requirements. Two
main packages are currently available:
PPI (Press Pack IEGT) and
PMI (Plastic Module IEGT).
Toshiba Electronics Europe GmbH
Discrete packages for low and high voltage MOSFETs
PPI (VCES=3300V, 4500V) are TOSHIBA
original packages using pressure contact
structures. Basic features are specifically
downsizing, much higher power density,
high efficiency and high reliability in the
field of electricity conversion such as in-
dustrial drive systems, power quality and
HVDC (High Voltage Direct Current).
TOSHIBA is also adopting new compound
material like SiC (Silicon Carbide). So,
new discrete devices like SiC SBD (650V,
1200V) and hybrid SiC (Silicon IEGT +
SiC SBD) in 1700V and 3300V are already
available in the market. SiC MOSFET
(1200V) will be released soon as well.
Those products are realizing much low-
er power losses, much higher efficiency
compared to conventional silicon-based
power devices.
PMI: Hybrid SiC device
PPI: 125 mm IEGT
