Tutorial
Date: 12/10/2026
Location: Digital Event
Technical Chair:
Dr. Stefan Hain, ON Semiconductor GmbH
Organisation:
Krista Schmidt
+49 911 81 02 88 - 16
krista.schmidt(at)ecpe.org
Registration Deadline: 8 October 2026
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The behaviour of power semiconductors such as IGBTs and MOSFETs in the event of a short circuit is critical to the safety and reliability of electronic systems. Depending on the application and semiconductor type (IGBT, Si-MOSFET, SiC-MOSFET, or various GaN switches), the components exhibit different behaviours and characteristics that can be leveraged or must be taken into account to ensure safe and robust operation.
In this training course, we clarify which applications place demands on the short-circuit withstand capability of power semiconductors. Common definitions of terms and their use in practical applications are explained. We discuss the structure of semiconductors and describe how this, together with the semiconductor material used, influences the short-circuit behaviour of the respective component. Furthermore, semiconductor-specific failure mechanisms will be identified and discussed.
The various types of short-circuits will also be explained. Detection methods and protective circuits tailored to the respective semiconductor topologies are included in the training, as is an overview of current standards and their application.
Targeted audience
This tutorial is suitable for application engineers, technical staff in test bays as well as R&D employees which are new to this topic.
All presentations and discussions will be in English language.
Tutorial
Date: 12/10/2026
Location: Digital Event
Technical Chair:
Dr. Stefan Hain, ON Semiconductor GmbH
Organisation:
Krista Schmidt
+49 911 81 02 88 - 16
krista.schmidt(at)ecpe.org
Registration Deadline: 8 October 2026
Postal address ECPE e.V.:
ECPE European Center for Power Electronics e.V.
Ostendstrasse 181
D-90482 Nuremberg, Germany
Phone: +49 (0)911 81 02 88-0
© 2018 ECPE European Center for Power Electronics e.V.