DC grids use direct current for power distribution, offering greater efficiency and cost-effectiveness in the growing decentralized energy landscape, particularly for integrating renewable energy sources like solar photovoltaics and battery storage. Unlike the conventional AC grid, DC grids eliminate inefficient conversion steps, as many modern devices and energy sources are inherently DC-powered. This trend to DC grids, particularly in the Medium Voltage (MV) range, leads to a similar challenge as in vehicle electrification with on-board voltages of 800 V in EVs and > 1000 V in heavy duty vehicles, the DC Circuit Breaker (DC-CB) issue. As a protection element the DC-CB has to open very fast in case of a fault e.g. a short circuit, and in on-state lowest losses are key. Solid-State Circuit Breakers (SSCBs) are protection devices that use power semiconductors (Si-MOSFETs or IGBTs, or SiC transistors), instead of mechanical contacts to safeguard electrical circuits against overloads and short circuits, allowing an extremely fast interruption in a few microseconds. These requirements make fast-switching SiC devices with its low on-resistance an excellent choice for Solid-State Circuit Breakers. 

Furthermore, the workshop aims to strengthen the cooperation between Europe and Japan in the area of SiC-based Circuit Breaker research. Therefore, Prof. Keiji Wada from the Tokyo Metropolitan University has been invited to join the team of Technical Chairs with Prof. Brueckner (Bundeswehr University Munich) and Prof. Lorenz (ECPE).