ISTFA 2023

Abstract submission is now closed.

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Saving global resources by increasing energy efficiency is among the most significant problems that global society must address today. To achieve this, a major target is developing efficient and reliable power electronics devices for providing the required high-performing hardware components. Power semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) technologies are becoming increasingly important since they allow smaller sizes, lighter weight, lower costs, and higher efficiency of power electronics systems. For these innovative components, there are still many issues to be resolved regarding the lack of robustness and reliability. This arises from significant failure risks during manufacturing and consequently may form roadblocking obstacles on the way to the mass market. The complexity of highly integrated SiC and GaN devices requires an in-depth understanding of defect formation and degradation mechanisms as well as adapted failure analysis methodologies.

Registration will be available in the summer of 2023!